论文标题
如何认识Mott Critical的普遍方面？
How to recognize the universal aspects of Mott criticality?
论文作者
论文摘要
在本文中，我们批判性地讨论了几个二维电子系统的示例，这些系统显示了莫特（或wigner- mott）类型的相互作用驱动的金属隔离器过渡，包括在半导体，莫特有机材料中稀释的二维电气气（2DEG），以及最近发现的过渡过渡型二十一迪希尔科尔（Tmogenide）（tmogeniir）。在所有这些系统中都发现了明显相似的行为，这开始绘制出莫特临界的强大画面。最值得注意的是，在金属侧观察到了电阻率最大值，其温度尺度在过渡时消失。我们将这些系统上的可用实验数据与现有的三种理论情况进行了比较：Spinon理论，动力学平均场理论（DMFT）和渗透理论。我们表明，可以通过研究介电响应的分析来研究电阻率最大值的起源来区分Mott Critical的DMFT和渗透图。
In this paper we critically discuss several examples of two-dimensional electronic systems displaying interaction-driven metal-insulator transitions of the Mott (or Wigner--Mott) type, including dilute two-dimension electron gases (2DEG) in semiconductors, Mott organic materials, as well as the recently discovered transition-metal dichalcogenide (TMD) moiré bilayers. Remarkably similar behavior is found in all these systems, which is starting to paint a robust picture of Mott criticality. Most notable, on the metallic side a resistivity maximum is observed whose temperature scale vanishes at the transition. We compare the available experimental data on these systems to three existing theoretical scenarios: spinon theory, Dynamical Mean Field Theory (DMFT) and percolation theory. We show that the DMFT and percolation pictures for Mott criticality can be distinguished by studying the origins of the resistivity maxima using an analysis of the dielectric response.
