论文标题
单层MOS $ _2 $在纳米结构硅波导上的直接增长
Direct Growth of Monolayer MoS$_2$ on Nanostructured Silicon Waveguides
论文作者
论文摘要
我们首次报道了二硫化钼（MOS $ _2 $）单层在纳米结构的硅 - 绝缘体波导中的直接生长。我们的结果表明，在可扩展过程中使用化学蒸气沉积（CVD）的可能性。 2D材料在纳米结构上的直接生长纠正了基于转移的方法的许多缺点。我们表明，范德华的材料在波导结构的曲线，边缘和硅sio $ _2 $界面上跨曲线，边缘和硅sio $ _2 $。在这里，用作生长基材的波导结构不仅在其几何形状方面都很复杂，而且由于涉及两种材料（SI和SIO $ _2 $）。这样的无转移方法产生了一种新的方法，可将纳米结构，集成的光学体系结构与光学活跃的直接半导体进行功能。
We report for the first time the direct growth of Molybdenum disulfide (MoS$_2$) monolayers on nanostructured silicon-on-insulator waveguides. Our results indicate the possibility of utilizing the Chemical Vapour Deposition (CVD) on nanostructured photonic devices in a scalable process. Direct growth of 2D material on nanostructures rectifies many drawbacks of the transfer-based approaches. We show that the van der Waals materials grow conformally across the curves, edges, and the silicon-SiO$_2$ interface of the waveguide structure. Here, the waveguide structure used as a growth substrate is complex not just in terms of its geometry but also due to the two materials (Si and SiO$_2$) involved. A transfer-free method like this yields a novel approach for functionalizing nanostructured, integrated optical architectures with an optically active direct semiconductor.
