论文标题
SGR B区域的多波长研究：连续的云云碰撞触发广泛的恒星形成事件？
A Multiwavelength Study of the Sgr B Region: Contiguous Cloud-Cloud Collisions Triggering Widespread Star Formation Events?
论文作者
论文摘要
SGR \，B区域，包括SGR \，B1和SGR \，B2，是银河系中最活跃的恒星形成区域之一。谷川等人。 （1994年）最初提出SGR \，B2是由云云碰撞（CCC）形成的，这两个云之间的速度为$ \ sim $ 45 km〜s $^s $^{ - 1} $和$ \ sim $ \ sim $ 75 km〜s $^s $^{ - 1} $。但是，一些最近的观察性研究与这种情况发生冲突。我们通过使用最新的，完全采样的密集气体数据并采用最近开发的CCC识别方法来重新分析该区域，我们成功地鉴定了50多个CCC并在各种波长下进行了比较。我们发现了两个速度组件广泛分布在该地区，并且显示了CCC的清晰签名，每个签名均为$ \ sim $ 10 $^6 $ $ M_ \ odot $。基于这些观察结果，我们建议一种替代方案，其中两个速度特征之间的连续碰撞相对速度为$ \ sim $ 20 km〜s $^s $^{ - 1} $创建了SGR \，b1和sgr \ sgr \ b2。物理参数（例如圆柱密度和碰撞云的相对速度）满足了发现的关系，该关系适用于最大的银河CCC，这意味着，可以理解出由于同一物理CCC过程，因此在外部银河系中触发了银河系中的高质量恒星形成。
The Sgr\,B region, including Sgr\,B1 and Sgr\,B2, is one of the most active star-forming regions in the Galaxy. Hasegawa et al. (1994) originally proposed that Sgr\,B2 was formed by a cloud-cloud collision (CCC) between two clouds with velocities of $\sim$45 km~s$^{-1}$ and $\sim$75 km~s$^{-1}$. However, some recent observational studies conflict with this scenario. We have re-analyzed this region, by using recent, fully sampled, dense-gas data and by employing a recently developed CCC identification methodology, with which we have successfully identified more than 50 CCCs and compared them at various wavelengths. We found two velocity components that are widely spread across this region and that show clear signatures of a CCC, each with a mass of $\sim$10$^6$ $M_\odot$. Based on these observational results, we suggest an alternative scenario, in which contiguous collisions between two velocity features with a relative velocity of $\sim$20 km~s$^{-1}$ created both Sgr\,B1 and Sgr\,B2. The physical parameters, such as the column density and the relative velocity of the colliding clouds, satisfy a relation that has been found to apply to the most massive Galactic CCCs, meaning that the triggering of high-mass star formation in the Galaxy and starbursts in external galaxies can be understood as being due to the same physical CCC process.
