论文标题
闸门调节，超导体 - 轴向导体参数放大器
Gate-tunable, superconductor-semiconductor parametric amplifier
论文作者
论文摘要
我们已经构建了一个参数放大器，将约瑟夫森场效应晶体管（JOFET）作为活动元素。该设备的谐振频率在2 GHz范围内可进行现场效应。 JOFET放大器具有20 dB的增益，4 MHz的瞬时带宽和1 dB的压缩点-125.5 dBm时，以固定的谐振频率进行操作时。
We have built a parametric amplifier with a Josephson field effect transistor (JoFET) as the active element. The device's resonant frequency is field-effect tunable over a range of 2 GHz. The JoFET amplifier has 20 dB of gain, 4 MHz of instantaneous bandwidth, and a 1 dB compression point of -125.5 dBm when operated at a fixed resonance frequency.
