论文标题
范德华（Van der Waals
Van Der Waals Heteroepitaxy of GaSe and InSe, Quantum Wells and Superlattices
论文作者
论文摘要
半导体异质结构中的带隙工程和量子限制提供了对电磁场的微调材料响应的手段，并在各种光谱中进行了光。尽管如此，在晶格不匹配的底物上形成半导体异质结构一直是几十年来的挑战，从而导致对设备集成的限制以及在重要波长频段中缺乏有效的设备。在这里，我们表明，二维（2D）Gase和Inse异质结构的范德华的外观出现在具有实质不同的晶格参数的底物上，即硅和蓝宝石。 GASE/INSE异质结构应用于量子井和超晶格的生长中，呈现了与带间跃迁相关的光致发光和吸收。此外，我们基于SI上的异质结构演示了一个自动的光电探测器，可在可见的NIR波长范围内起作用。这些结果是在晶圆尺度制造的，为基于这些分层的2D材料在当前SI技术中的这些分层材料轻松整合铺平了道路。
Bandgap engineering and quantum confinement in semiconductor heterostructures provide the means to fine-tune material response to electromagnetic fields and light in a wide range of the spectrum. Nonetheless, forming semiconductor heterostructures on lattice-mismatched substrates has been a challenge for several decades, leading to restrictions for device integration and the lack of efficient devices in important wavelength bands. Here, we show that the van der Waals epitaxy of two-dimensional (2D) GaSe and InSe heterostructures occur on substrates with substantially different lattice parameters, namely silicon and sapphire. The GaSe/InSe heterostructures were applied in the growth of quantum wells and superlattices presenting photoluminescence and absorption related to interband transitions. Moreover, we demonstrate a self-powered photodetector based on this heterostructure on Si that works in the visible-NIR wavelength range. Fabricated at wafer-scale, these results pave the way for an easy integration of optoelectronics based on these layered 2D materials in current Si technology.
