论文标题
X射线半导体超快速响应材料的理论和实验研究基于辐射效应
Theoretical and experimental study on Noise Equivalent Power of X-ray semiconductor ultra-fast response material based on the rad-optic effect
论文作者
论文摘要
基于辐射效应的半导体材料可实现X射线的超快速检测，并在融合诊断中起重要作用。获得半导体超快响应材料的准确噪声当量功率（NEP）是检测X射线的关键。在本文中，分析了X射线照射下半导体的折射率变化机制，并通过LT-AlgaAS衍射成像实验建立了衍射效率与X射线光子能量之间的定量关系。计算了1 KEV-10 KEV X射线辐射下LT-AlgaA的脉冲响应，揭示了NEP密度随辐射光子能的变化。在轰击AL目标以生成1.5 KEV X射线的情况下，进行了LT-AlgaA的成像实验。 LT-AlgaA的衍射图像与辐射强度有线性关系，LT-AlgaA的NEP密度达到4.80*105W/CM2。这项研究对基于辐射效应的超快速X射线成像系统的开发具有参考意义。
Semiconductor material based on the rad-optic effect enables ultra-fast detection of X-rays and plays an important role in fusion diagnostics. Obtaining the accurate noise equivalent power (NEP) of the semiconductor ultrafast response material is the key to detecting X-rays. In this paper, the refractive index change mechanism of the semiconductor under X-ray irradiation was analyzed, and the quantitative relationship between the diffraction efficiency and the X-ray photon energy was established through the LT-AlGaAs diffraction imaging experiments. The impulse responses of LT-AlGaAs under 1 KeV-10 KeV X-ray radiation were calculated, revealing the variation of NEP density with radiated photon energy. In the case of bombarding the Al target to generate 1.5 KeV X-rays, the imaging experiments of LT-AlGaAs were performed. The diffraction image of LT-AlGaAs has a linear relationship with the radiation intensity, and the NEP density of LT-AlGaAs reaches 4.80*105W/cm2. This study has reference significance for the development of ultra-fast X-ray imaging systems based on the rad-optic effect.
