论文标题
高度硼激光掺杂硅中的硼对的证据
Evidence of boron pairs in highly boron laser doped silicon
论文作者
论文摘要
次级离子质谱和HALL效应测量对硼掺杂硅进行，浓度在0.02 at。％至0.％。通过将Si晶片的化学吸收位点饱和，然后用BCl3饱和，然后是纳米秒激光退火（气体浸入激光掺杂），从而使超高的硼掺杂掺杂。因此，硼浓度几乎随过程重复的数量而变化。但是，孔浓度并非倾向于在高硼浓度下饱和。硼浓度和孔浓度之间的差异随着硼浓度的平方而增加，指向硼对的形成是对无活性硼的增加的主要贡献。
Secondary Ions Mass Spectroscopy and Hall effect measurements were performed on boron doped silicon with concentration between 0.02 at.% and 12 at.%. Ultra-high boron doping was made by saturating the chemisorption sites of a Si wafer with BCl3, followed by nanosecond laser anneal (Gas Immersion Laser Doping). The boron concentration varies thus nearly linearly with the number of process repetitions. However, it is not the case for the hole concentration which tends to saturate at high boron concentration. The difference between boron and hole concentration increases as the square of boron concentration, pointing towards the formation of boron pairs as the dominant contribution to the increase of inactive boron.
