论文标题
电子在限制在微通道结构中的超流体氦气上电子的rydberg转变的图像充电检测
Image-charge detection of the Rydberg transition of electrons on superfluid helium confined in a microchannel structure
论文作者
论文摘要
图像充电检测提供了一种新的直接方法，用于检测被困在液态氦表面的电子中的Rydberg转变。对这种方法的兴趣是由完成单个捕获电子的旋转状态读数的可能性，从而为在液态氦上使用电子旋转进行量子计算打开了新的途径。在这里，我们报告了在限制在20-UM宽的阵列和4-UM深通道中的多电子系统中Rydberg转变的图像齐射检测。由于由于嵌入微通道结构中嵌入的电极的紧密接近，因此图像充电信号的显着增强，因此成为可能的检测。 400-500〜GHz范围内电子的过渡频率可通过应用于设备的直流偏置电压高度控制，并且与我们的计算非常一致。这项工作表明，微通道结构为电子操作及其量子态检测提供了合适的平台，并具有将检测方法缩放到单个电子的可行性。
The image-charge detection provides a new direct method for the detection of the Rydberg transition in electrons trapped on the surface of liquid helium. The interest in this method is motivated by the possibility to accomplish the spin state readout for a single trapped electron, thus opening a new pathway towards using electron spins on liquid helium for quantum computing. Here, we report on the image-charge detection of the Rydberg transition in a many-electron system confined in an array of 20-um wide and 4-um deep channels filled with superfluid helium. Such detection is made possible because of a significant enhancement of the image-charge signal due to close proximity of trapped electrons to the electrodes embedded in the microchannel structure. The transition frequency of electrons in the range of 400-500~GHz is highly controllable by the dc bias voltages applied to the device and is in a good agreement with our calculations. This work demonstrates that microchannel structures provide a suitable platform for electron manipulation and their quantum state detection, with a feasibility of scaling the detection method to a single electron.
