论文标题
拓扑半导体 - 驱动器连接处的抑制障碍
Disorder Suppression in Topological Semiconductor-Superconductor Junctions
论文作者
论文摘要
接近大块超导体的疾病可以在推定的拓扑超导体中散射准粒子,并最终破坏拓扑超导状态。我们使用散射方法和随机基质计算来估计拓扑约瑟夫森连接中的疾病散射时间。我们发现,即使在强耦合极限下,大部分超导体的散射速率也被半导体和超导体之间的费米瞬时之比受到抑制。这种对疾病散射的抑制伴随着这种半导体/超导体接口处的近乎完美的安德里弗反射,可以用作这种清洁接近效应的标志。我们还发现,这些结果可以通过散射的半经典估计来理解。我们讨论其他系统中的限制,例如半导体纳米线,根据类似的经典估计,抑制了混乱散射。
Disorder in a proximitizing bulk superconductor can scatter quasiparticles in a putative topological superconductor and eventually destroy the topological superconducting state. We use a scattering approach and a random-matrix calculation to estimate the disorder scattering time in a topological Josephson junction. We find that the disorder scattering rate from the bulk of the superconductor, even in the strong coupling limit, is suppressed in the ratio of Fermi momenta between the semiconductor and superconductor. This suppression of disorder scattering is accompanied by near perfect Andreev reflection at such semiconductor/superconductor interfaces, which can be used as a signature of such clean proximity effect. We also find that these results can be understood by a semiclassical estimate of scattering. We discuss limits in other systems such as the semiconductor nanowire where disorder scattering is suppressed according to similar classical estimates.