论文标题
可靠的磁性记忆应用的厚度控制范德华的晶状体尺度外延生长
Wafer-scale epitaxial growth of the thickness-controllable van der Waals ferromagnet CrTe2 for reliable magnetic memory applications
论文作者
论文摘要
为了利用二维Van der Waals（VDW）Ferromagnets（FMS）的有趣特性，用于多功能应用，关键挑战在于可靠的可扩展设备生产的可靠材料合成。在这里，我们证明了在2英寸蓝宝石底物上单晶1T-CRTE2薄膜的外延生长。从悬挂无键的AL2O3（0001）表面的均匀表面能中受益，从初始生长阶段就可以观察到逐层VDW生长模式，这需要精确控制样品厚度和整个晶圆的原子表面形态。此外，在CRTE2/AL2O3接口处的库仑相互作用是定制异常霍尔响应的有效调谐参数，并且基于CRTE2的基于CRTE2的Spin-Orbit扭矩设备的结构优化可导致实质性切换功率降低54％。我们的结果可能会为基于可配置的VDW FMS设计的能源有效的Spintronics设计提供一个一般框架。
To harness the intriguing properties of two-dimensional van der Waals (vdW) ferromagnets (FMs) for versatile applications, the key challenge lies in the reliable material synthesis for scalable device production. Here, we demonstrate the epitaxial growth of single-crystalline 1T-CrTe2 thin films on 2-inch sapphire substrates. Benefiting from the uniform surface energy of the dangling bond-free Al2O3(0001) surface, the layer-by-layer vdW growth mode is observed right from the initial growth stage, which warrants precise control of the sample thickness and atomically smooth surface morphology across the entire wafer. Moreover, the presence of the Coulomb interaction at the CrTe2/Al2O3 interface serves as an effective tuning parameter to tailor the anomalous Hall response, and the structural optimization of the CrTe2-based spin-orbit torque device leads to a substantial switching power reduction by 54%. Our results may lay out a general framework for the design of energy-efficient spintronics based on configurable vdW FMs.
