论文标题
使用量子信息数量在半导体量子孔中表征螺旋状态
Characterization of helical states in semiconductor quantum wells using quantum information quantities
论文作者
论文摘要
在倒立量子井中计算了半导体量子井中的单电子散装和边缘状态的信息含量，在倒转方案中，拓扑量量子霍尔效应实验的传导造成了边缘状态。为了研究这些状态的信息含量，我们首先计算了逼真的二维单电子状态，首先求解八波段$ \ mathbf {k} \ cdot \ cdot \ mathbf {p} $ hamiltonian，以获得散装状态，然后获得四个乐队有效的汉密尔顿人来获得边缘状态。分析了类似信息量的行为，作为定义量子井的不同参数的函数。提出的结果表明，螺旋边缘状态可以使用不同的数量来挑选出这些状态的丰富现象学。
The information content of one-electron bulk and edge states in semiconductor quantum wells is calculated in the inverted regime, where edge states, topologically protected, are responsible for the conduction in Spin Quantum Hall effect experiments. To study the information content of these states we first calculate realistic two dimensional one-electron states, solving first the eight-band $\mathbf{k}\cdot\mathbf{p}$ Hamiltonian to obtain the bulk states and then a four band effective Hamiltonian to obtain the edge states. The behavior of information-like quantities, as a function of the different parameters that define the quantum well, is analyzed. The results presented show that the helical edge states can be singled out using different quantities that characterize the rich phenomenology of these states.
