论文标题
通过He Ion辐照增强磁化的全光切换
Enhancing All-Optical Switching of Magnetization by He Ion Irradiation
论文作者
论文摘要
基于CO/GD的合成铁磁体中，单个飞秒激光脉冲的磁化全光开关（AOS）是最快的磁化切换过程。另一方面，他的离子辐射已成为Spintronic材料平台的接口工程的有前途的工具，从而产生了磁性特性的重大修饰。在本文中，我们探讨了使用He离子辐照来增强基于CO/GD双层的合成铁磁铁的单个脉冲AO。通过数值模拟并通过实验验证了通过离子辐照的组成层的混合。我们从理论上使用分层的3-温度模型对AOS的相互混合的影响进行了建模，并发现通过通过混合破坏原始CO/GD界面来显着增强AOS。遵循这个概念，我们研究了AOS的阈值阈值随着离子辐射的函数的函数。我们发现，AOS阈值通量可以降低近30％。我们的研究揭示了He离子辐射对AOS的控制，这为本地AOS工程开辟了一种工业兼容的方法。
All-optical switching (AOS) of magnetization by a single femtosecond laser pulse in Co/Gd based synthetic ferrimagnets is the fastest magnetization switching process. On the other hand, He ion irradiation has become a promising tool for interface engineering of spintronic material platforms, giving rise to significant modification of magnetic properties. In this paper, we explore the use of He ion irradiation to enhance single pulse AOS of Co/Gd bilayer-based synthetic ferrimagnets. The intermixing of the constituent magnetic layers by He ion irradiation was both numerically simulated and experimentally verified. We theoretically modelled the effects of intermixing on AOS using the layered microscopic 3-temperature model and found that AOS is enhanced significantly by breaking the pristine Co/Gd interface through intermixing. Following this notion, we studied the threshold fluence of AOS as a function of He ion irradiation fluence. We found that the AOS threshold fluence can be reduced by almost 30%. Our study reveals the control of AOS by He ion irradiation, which opens up an industrially compatible approach for local AOS engineering.
