论文标题
Terahertz微孔子的材料表征
Terahertz microresonators for material characterisation
论文作者
论文摘要
Terahertz（THZ）技术正在迅速发展，数据和信息处理设备的进步至关重要。 Silicon THZ微孔子提供了完美的平台，以开发可以改变THZ技术的紧凑和集成设备。在这里，我们介绍了一项系统的研究，该研究涉及硅光盘微孔子的关键数字 - 质量因子（Q -Factor），以依赖于底物的电阻率。我们的结果表明，Q因子在10k $ω$ cm到15K $ω$ cm的电阻率和电阻率变化差异从0.6THz时将Q-因子从50k更改为76K。此外，我们通过实验确定硅材料吸收与基板的电阻率成反比。通常，所提出的方法非常适合精确测量THZ结构域中低损耗材料的材料吸收，这在使用常规THZ光谱法中具有挑战性。
Terahertz (THz) technology is rapidly evolving, and the advancement of data and information processing devices is essential. Silicon THz microresonators provide perfect platforms to develop compact and integrated devices that could transform THz technology. Here we present a systematic study on the key figure of merit of silicon THz disc microresonators - the quality factor (Q-factor) - in dependence on the substrate's resistivity. Our results show that the Q-factor depends linearly on the resistivity and a variation in resistivity from 10k$Ω$cm to 15k$Ω$cm changes the Q-factor from 50k to 76k at 0.6THz. Moreover, we experimentally determine that the silicon material absorption is inversely proportional to the substrate's resistivity. In general, the presented methodology is ideally suited to precisely measure the material absorption of low-loss materials in the THz domain, which is challenging using conventional THz spectroscopy.
