论文标题
CVD生长的MOS $ _2 $单层硅基底物的热边界电导通过扫描热显微镜确定
Thermal boundary conductance of CVD-grown MoS$_2$ monolayer-on-silica substrate determined by scanning thermal microscopy
论文作者
论文摘要
我们表征了通过化学蒸气沉积通过环境条件扫描热显微镜（STHM）生长的二硫钼（MOS $ _2 $）的热量耗散。我们发现，与300 nm的SIO $ _2 $接触的MOS $ _2 $单层的热边界电导率约为4.6 $ \ pm $ 2 MW M $^m $^{ - 2} $ K $^{ - 1} $。该值在用其他技术（例如拉曼温度计）（跨越一个数量级）（0.44-50 mw m $^{ - 2} $ k $^{ - 1} $）的其他技术（例如拉曼）中确定的值的低范围。对支持的MOS $ _2 $的平面内电导率的敏感性非常低，这强调了热边界电导是MOS $ _2 $单层时的关键驱散驱动器。此外，这项工作还表明，使用不同厚度的SIO $ _2 $的STHM校准，最初旨在与散装材料一起使用，可以扩展到2D材料。
We characterize heat dissipation of supported molybdenum disulfide (MoS$_2$) monolayers grown by chemical vapor deposition by means of ambient-condition scanning thermal microscopy (SThM). We find that the thermal boundary conductance of the MoS$_2$ monolayers in contact with 300 nm of SiO$_2$ is around 4.6 $\pm$ 2 MW m$^{-2}$ K$^{-1}$. This value is in the low range of the values determined for exfoliated flakes with other techniques such as Raman thermometry, which span an order of magnitude (0.44-50 MW m$^{-2}$ K$^{-1}$), and underlines the dispersion of measurements. The sensitivity to the in-plane thermal conductivity of supported MoS$_2$ is very low, highlighting that the thermal boundary conductance is the key driver of heat dissipation for the MoS$_2$ monolayer when it is not suspended. In addition, this work also demonstrates that SThM calibration using different thicknesses of SiO$_2$, initially aimed at being used with bulk materials can be extended to 2D materials.
