论文标题
在低温下生长的半继承人合金拓扑半学的巨型旋转大厅效应
Giant spin Hall effect in half-Heusler alloy topological semimetal YPtBi grown at low temperature
论文作者
论文摘要
Half-Heusler Alloy拓扑半学YPTBI是具有有效的自旋源材料的有前途的候选人，具有大型自旋霍尔角$θ$θ$ _ {SH} $和高热稳定性。但是，低散装载体密度的高质量的YPTBI薄膜通常在600 $°C下生长，超过了后端（Beol）过程的400 $°C的限制。在这里，我们研究了在较低的生长温度下生长的YPTBI薄膜的结晶度和自旋大厅效应，低至300 $°c。尽管$θ$$ _ {sh} $由于结晶度的降解而降低了300 $°C的生长温度，但通过降低溅射AR气压来恢复。我们达到了一个巨大的$θ$ _ {sh} $ 8.2，并通过超动电流密度约为10 $^5 $^5 $^5 $ a/cm $^2 $ yptbi的高效旋转轨道扭矩磁化，以300 $°C生长的yptbi in yptbi in yptbi yptbi y pa。适合贝尔过程的温度。
Half-Heusler alloy topological semimetal YPtBi is a promising candidate for an efficient spin source material having both large spin Hall angle $θ$$_{SH}$ and high thermal stability. However, high-quality YPtBi thin films with low bulk carrier density are usually grown at 600$°$C, which exceeds the limitation of 400$°$C for back end of line (BEOL) process. Here, we investigate the crystallinity and spin Hall effect of YPtBi thin films grown at lower growth temperature down to 300$°$C. Although $θ$$_{SH}$ degraded with lowering the growth temperature to 300$°$C due to degradation of the crystallinity, it was recovered by reducing the sputtering Ar gas pressure. We achieved a giant $θ$$_{SH}$ up to 8.2 and demonstrated efficient spin-orbit torque magnetization switching by ultralow current density of ~10$^5$ A/cm$^2$ in YPtBi grown at 300$°$C with the Ar gas pressure of 1 Pa. Our results provide the recipe to achieve giant $θ$$_{SH}$ in YPtBi grown at lower growth temperature suitable for BEOL process.
