论文标题
在室温下Weyl Semimetal Tap中有效的旋转电荷互连
Efficient spin-to-charge interconversion in Weyl semimetal TaP at room temperature
论文作者
论文摘要
在本文中，我们通过逆Rashba-Edelstein效应（IREE）介绍了Weyl Semimetal Tap中的旋转电流转换属性，并将这种量子材料与铁电磁金属Permalloy $（py = ni_ = ni_ {81} fe_ {199}）集成在一起。自旋电流是通过微波驱动的铁磁共振在PY层中生成的，并在室温下通过沿Tap Crystal的直流电压检测到。我们观察到一个野外对称的电压信号，而不会在使用金属铁磁铁的研究中观察到的自旋整流效应，而没有污染不对称线的污染。观察到的电压归因于基于IREE的旋转电流转换，这是由于Weyl Semimetals的块状带结构本质上诱导的自旋轨道耦合而成为可能。测得的IREE系数$λ_{IREE} =（0.30 \ pm {0.01}）$ nm是两个数量级，比石墨烯大的数量级，与某些金属接口和一些拓扑绝缘子报告的值相当或大于或大于或大的值。
In this paper we present spin-to-charge current conversion properties in the Weyl semimetal TaP by means of the inverse Rashba-Edelstein effect (IREE) with the integration of this quantum material with the ferromagnetic metal Permalloy $(Py=Ni_{81}Fe_{19})$. The spin currents are generated in the Py layer by the spin pumping effect (SPE) from microwave-driven ferromagnetic resonance and are detected by a dc voltage along the TaP crystal, at room temperature. We observe a field-symmetric voltage signal without the contamination of asymmetrical lines due to spin rectification effects observed in studies using metallic ferromagnets. The observed voltage is attributed to spin-to-charge current conversion based on the IREE, made possible by the spin-orbit coupling induced intrinsically by the bulk band structure of Weyl semimetals. The measured IREE coefficient $λ_{IREE}=(0.30 \pm{0.01})$ nm is two orders of magnitude larger than in graphene and is comparable to or larger than the values reported for some metallic interfaces and for several topological insulators.
