论文标题
高性能的Pockels效应调制和基于硅的GAP/SI，ALP/SI，ZNS/SI，ALN/3C-SIC，GAAS/GE，GAAS/GE，ZNSE/GAAS和ZNSE/GE SERPLATTICE-ON-ON-ON-ON-INSUBLATTICS INSTUBLATIT MUSSINGATOR集成电路
High-performance Pockels-effect modulation and switching in silicon-based GaP/Si, AlP/Si, ZnS/Si, AlN/3C-SiC, GaAs/Ge, ZnSe/GaAs, and ZnSe/Ge superlattice-on-insulator integrated circuits
论文作者
论文摘要
我们在绝缘体（SLOI）平台上提出了新的基于SI的波导超级晶格，以进行高性能电光（EO）2 x 2和N x m开关以及1 x 1调制；包括广泛的光谱和共振。我们根据晶格匹配的无含量gap/si，alp/si，Zns/si，aln/3c-sic，gaas/gaas/gaas/ge，znse/gaas和znse/gefer-cale短暂的狂潮超级狂潮，对晶格匹配的gap/si，alp/si，alp/si，alp/si，alp/si，a alp/si，a alp/si，a alp/si，a alp/si，a alp/si，a alp/si，sim praverprints eo the the smimal-fornition themy-forderbrince eo eo eo效应的理论研究。马赫 - 齐汉德干涉仪和微环谐振器可产生光电芯片。
We propose new Si-based waveguided Superlattice on Insulator (SLOI) platforms for high-performance electro-optical (EO) 2 x 2 and N x M switching and 1 x 1 modulation; including broad spectrum and resonant. We present a theoretical investigation, based on the tight-binding Hamiltonian, of the Pockels EO effect in the lattice-matched undoped GaP/Si, AlP/Si, ZnS/Si, AlN/3C-SiC, GaAs/Ge, ZnSe/GaAs, and ZnSe/Ge wafer-scale short-period superlattices that are etched into waveguided networks of small-footprint Mach-Zehnder interferometers and micro-ring resonators to yield opto-electronic chips.
