论文标题
通过干扰光刻的传统紫外线光源，将特征尺寸降低到11 nm
Pushing the feature size down to 11 nm by interference photolithography with hyperbolic metamaterials under conventional UV light source
论文作者
论文摘要
受成本和复杂性的限制，很难通过传统的干涉光刻来实现超分辨率光刻。在这里，我们通过使用双曲线超材料（HMMS） /光静电 /金属等离子体波导来开发等离子干扰线学技术，从理论上将特征大小降低至16 nm，甚至在365 nm的波长下，将特征大小降低至11 nm。基于提出的HMM的波导可以支持高分子模式用于超级分辨率光刻。此外，在提出的光刻结构中支持的等离子模式可以通过HMM的尺寸和材料的介电常数来量身定制，这使得在常规紫外线下获得更高的分辨率模式。我们的发现开辟了一条途径，将纳米光刻节点推向10 nm，以在传统的UV光源下进行低成本和大面积制造。
Limited by the cost and complexity, superresolution lithography is hard to achieve through the traditional interference lithography. We here developed the plasmonic interference lithography technique by using a hyperbolic metamaterials (HMMs) / photoresist / metal plasmonic waveguide to push the feature sizes theoretically down to 16 nm and even to 11 nm at the wavelength of 365 nm with TM polarization. The waveguide based on the proposed HMMs can support high-k mode for superresolution lithography. Furthermore, plasmonic mode supported in the proposed lithography structure can be tailored by dimension of HMM and permittivity of the materials, which makes it possible to get higher resolution pattern under conventional UV light. Our findings open up an avenue to pushing the nanolithography node towards 10 nm for low-cost and large area fabrication under conventional UV light source.
