论文标题

弱拓扑绝缘体BI2TEI和拓扑金属BI3TEI中的压力诱导的超导性

Pressure-induced superconductivity in the weak topological insulator Bi2TeI and the topological metal Bi3TeI

论文作者

Elmslie, T. A., VanGennep, D., Baten, R. N., Downing, J., Bi, W., Weir, S. T., Vohra, Y. K., Baumbach, R. E., Hamlin, J. J.

论文摘要

我们报告了一系列高压电运输,磁化率和X射线衍射测量,这些测量值和弱拓扑绝缘子BI2TEI和拓扑金属BI3TEI上的单晶进行了测量。室温X射线衍射测量表明,两种材料都经过一系列压力诱导的结构过渡,并最终在高压下采用无序的BCC合金结构。与先前建议的P4/NMM结构相比,对Bitei的已发表数据的重新分析表明,该材料在高压下也采用了无序的BCC结构。我们发现BI2TEI和BI3TEI分别在13 GPA和11.5 GPA的超导下成为超导。在两种情况下,BCC相的超导临界温度TC分别达到BI2TEI和BI3TEI的最大值为7 K和7.5 K,而DTC/DP <0分别达到最大值。结果表明,高压下B​​I-TE和BI-TE-I系统的合金BCC超导阶段似乎是普遍特征。

We report a series of high-pressure electrical transport, magnetic susceptibility, and x-ray diffraction measurements on single crystals of the weak topological insulator Bi2TeI and the topological metal Bi3TeI. Room temperature x-ray diffraction measurements show that both materials go through a series of pressure-induced structural transitions and eventually adopt a disordered bcc alloy structure at high pressure. A re-analysis of the published data on BiTeI indicates that this material also adopts a disordered bcc structure at high pressure, in contrast to the previously suggested P4/nmm structure. We find that Bi2TeI and Bi3TeI become superconducting at 13 GPa and 11.5 GPa, respectively. The superconducting critical temperature Tc of the bcc phase reaches maximum values of 7 K and 7.5 K for Bi2TeI and Bi3TeI, respectively and dTc/dP < 0 in both cases. The results indicate that disordered alloy bcc superconducting phases appear to be a universal feature of both the Bi-Te and Bi-Te-I systems at high pressure.

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