论文标题
通过使用Si-N层功能化来触发石墨烯中的超导性，半导体状态和三元谷结构
Triggering superconductivity, semiconducting states, and ternary valley structure in graphene via functionalization with Si-N layers
论文作者
论文摘要
在基于石墨烯的二维（2D）材料中，人们一直在追捕开设带隙并意识到静态谷的控制。在最近的Si-N层钝化的2D材料中成功的成功促进，在这里，我们提出了两种新的基于石墨烯的材料，即2D C2SIN和CSIN，通过第一原理计算。单层C2SIN是金属的，在低温下实现了超导性。单层CSIN具有出色的稳定性和机械性能。它是一个半导体，具有电子载体的三元谷结构。这些山谷与现有的Valleytronic平台不同，可以通过应用的单轴菌株来控制。载体的山谷极化进一步表现为各向异性电导率的明显变化，可以在简单的电测量中检测到。强相互作用的效果还导致较大的激子结合能，并增强紫外线范围内的光吸收。我们的工作开辟了一条新的途径，以实现超导性，三元谷结构和半导体，并具有增强的2D材料光吸收。
Opening a band gap and realizing static valley control have been long sought after in graphenebased two-dimensional (2D) materials. Motivated by the recent success in synthesizing 2D materials passivated by Si-N layers, here, we propose two new graphene-based materials, 2D C2SiN and CSiN, via first-principles calculations. Monolayer C2SiN is metallic and realizes superconductivity at low temperatures. Monolayer CSiN enjoys excellent stability and mechanical property. It is a semiconductor with a ternary valley structure for electron carriers. Distinct from existing valleytronic platforms, these valleys can be controlled by applied uniaxial strain. The valley polarization of carriers further manifest as a pronounced change in the anisotropic conductivity, which can be detected in simple electric measurement. The strong interaction effects also lead to large exciton binding energy and enhance the optical absorption in the ultraviolet range. Our work opens a new route to achieve superconductivity, ternary valley structure, and semiconductor with enhanced optical absorption in 2D materials.
