论文标题
高介电常数的掺杂半导体中的低温电子迁移率
Low-temperature electron mobility in doped semiconductors with high dielectric constant
论文作者
论文摘要
从理论上讲，我们提出并研究了具有较大介电常数的掺杂半导体中电子脉冲散射的新机制。它基于\ textit {vector}特征在晶格中引起的变形特征的概念，无论是否在单位单元格中不对称地位置不对称。结果，由于弹性变形衰减为$ 1/r^2 $，距杂质的距离为$ 1/r^2 $。这些缺陷上的电子散射（由于标准变形电位）导致低温迁移率$μ（n）$缩放，并用电子密度$ n $ $ n $表$μ（n）\ propto n^{ - 2/3} $接近相关材料的实验性观测值。
We propose and study theoretically a new mechanism of electron-impurity scattering in doped seminconductors with large dielectric constant. It is based upon the idea of \textit{vector} character of deformations caused in the crystalline lattice by any point defects siting asymmetrically in the unit cell. In result, local lattice compression due to the elastic deformations decay as $1/r^2$ with distance from impurity. Electron scattering (due to standard deformation potential) on such defects leads to low-temperature mobility $μ(n)$ scaling with electron density $n$ of the form $μ(n) \propto n^{-2/3}$ that is close to experimental observations on a number of relevant materials.
