论文标题
铁电域墙逻辑门
Ferroelectric Domain Wall Logic Gates
论文作者
论文摘要
从根本上讲，尼贝特锂是一种非常好的电绝缘体。但是，当存在180°域壁时，这种情况可能会发生巨大变化，因为通常发现它们是强烈的指导。绝对电导率取决于壁相对于[001]极化轴的倾斜角度，因此，如果可以改变这些倾斜角，则可以调节甚至连接电导率。在500nm厚的Z-Cut离子切片薄膜中，局部壁角变化可以通过施加的电偏置的感觉和幅度来控制。我们表明，这导致了类似二极管的电荷转运响应，该响应对半波整流有效，尽管仅在相对较低的AC频率下。但是，最重要的是，我们还证明了这样的域壁二极管可用于构建“和“包含”或逻辑门，其中“ 0”和“ 1”输出态显然可以区分。现实的设备建模允许在更复杂的布置中推断这些域壁二极管运行的结果，尽管非理想，但即使在两级级联逻辑中，仍然可以区分输出状态。尽管在概念上很简单，但我们认为，我们对启用壁壁的逻辑门的实验证明代表了朝着未来更广泛的“域壁纳米电子”实现的重要一步。
Fundamentally, lithium niobate is an extremely good electrical insulator. However, this can change dramatically when 180° domain walls are present, as they are often found to be strongly conducting. Absolute conductivities depend on the inclination angles of the walls with respect to the [001] polarisation axis and so, if these inclination angles can be altered, then electrical conductivities can be tuned, or even toggled on and off. In 500nm thick z-cut ion-sliced thin films, localised wall angle variations can be controlled by both the sense and magnitude of applied electrical bias. We show that this results in a diode-like charge transport response which is effective for half-wave rectification, albeit only at relatively low ac frequencies. Most importantly, however, we also demonstrate that such domain wall diodes can be used to construct "AND" and inclusive "OR" logic gates, where "0" and "1" output states are clearly distinguishable. Realistic device modelling allows an extrapolation of results for the operation of these domain wall diodes in more complex arrangements and, although non-ideal, output states can still be distinguished even in two-level cascade logic. Although conceptually simple, we believe that our experimental demonstration of operational domain wall-enabled logic gates represents a significant step towards the future broader realisation of "domain wall nanoelectronics".
