论文标题
应变诱导的间接到单向带隙过渡,光致发光增强和双层Mote2的线宽降低
Strain Induced Indirect-to-Direct Bandgap Transition, Photoluminescence Enhancement, and Linewidth Reduction in Bilayer MoTe2
论文作者
论文摘要
二维(2D)分层材料为通过应变控制提供了工程电子和光学性能的理想平台,因为它们具有极高的机械弹性和材料特性对机械应变的敏感依赖性。在本文中,为研究机械应变对双层Mote2光致发光(PL)的各种光谱特征的影响做出了合并的实验和理论努力。我们发现,双层MOTE2可以通过应变工程从间接转换为直接带隙材料转换,从而导致光致发光增强倍数为2.24。超过90%的PL来自在施加的最大应变下发出的直接激子发出的光子。重要的是,我们表明应变效应导致PL的整体线宽降低多达36.6%。我们将线宽的急剧下降归因于各种激发型品种(例如直接明亮的激子,TRIONS和间接激子)之间的应变诱导的复杂相互作用。我们对直接和间接激子发射特征的实验结果由基于第一原则电子带结构计算的理论激子能量解释。一致的理论 - 实验趋势表明,PL的增强和线宽的减少是随着应变的增加而增加直接激子贡献的后果。我们的结果表明,应变工程可以导致双层MOTE2的PL质量与单层对应物相当。较长的发射波长的额外优势使双层Mote2由于硅吸收的降低而更适合硅 - 光子学的整合。
Two-dimensional (2D) layered materials provide an ideal platform for engineering electronic and optical properties through strain control because of their extremely high mechanical elasticity and sensitive dependence of material properties on mechanical strain. In this paper, a combined experimental and theoretical effort is made to investigate the effects of mechanical strain on various spectral features of bilayer MoTe2 photoluminescence (PL). We found that bilayer MoTe2 can be converted from an indirect-to direct-bandgap material through strain engineering, resulting in a photoluminescence enhancement by a factor of 2.24. Over 90% of the PL comes from photons emitted by the direct excitons at the maximum strain applied. Importantly, we show that strain effects lead to a reduction of the overall linewidth of PL by as much as 36.6%. We attribute the dramatic decrease of linewidth to a strain-induced complex interplay among various excitonic varieties such as direct bright excitons, trions, and indirect excitons. Our experimental results on direct and indirect exciton emission features are explained by theoretical exciton energies that are based on first-principle electronic band structure calculations. The consistent theory-experimental trend shows that the enhancement of PL and the reduction of linewidth are the consequences of the increasing direct exciton contribution with the increase of strain. Our results demonstrate that strain engineering can lead to a PL quality of the bilayer MoTe2 comparable to that of the monolayer counterpart. The additional benefit of a longer emission wavelength makes the bilayer MoTe2 more suitable for Silicon-photonics integration due to the reduced Silicon absorption.