论文标题
纳米光腔中旋转缺陷的确定性激光写作
Deterministic Laser Writing of Spin Defects in Nanophotonic Cavities
论文作者
论文摘要
在开发可扩展的量子网络节点方面，高收益工程和腔发射机耦合的表征是一个突出的挑战。原位缺陷的形成过程可以防止实时缺陷腔表征，并且以前的原位方法需要进一步处理以改善发射极特性或仅限于散装底物。我们展示了使用纳秒脉冲上式激光激光器的腔体旋转缺陷的直接激光编写。 4h-silicon碳化物中的光子晶体腔充当纳米镜监测硅单处理（v $ _ {si}^ - $）缺陷形成$ 100〜 \ text {nm}^3 $ vacity模式体积。我们观察到与常规缺陷形成方法一致的缺陷旋转共振，腔体积聚的光致发光和激发态寿命，而无需进行辐射后热温退火。我们进一步发现，在接近空腔非晶化阈值的流体中，激发态寿命的指数降低，并在v $ _ {si}^ - $构造站点处显示了固有背景缺陷的单发局部退火。这种局部缺陷形成的实时原位方法与腔体积累缺陷旋转配对，标志着用于量子网络的工程腔 - 发射极发射器耦合的重要步骤。
High-yield engineering and characterization of cavity-emitter coupling is an outstanding challenge in developing scalable quantum network nodes. Ex-situ defect formation processes prevent real-time defect-cavity characterization, and previous in-situ methods require further processing to improve emitter properties or are limited to bulk substrates. We demonstrate direct laser-writing of cavity-integrated spin defects using a nanosecond-pulsed above-bandgap laser. Photonic crystal cavities in 4H-silicon carbide serve as a nanoscope monitoring silicon monovacancy (V$_{Si}^-$) defect formation within the $100~\text{nm}^3$ cavity mode volume. We observe defect spin resonance, cavity-integrated photoluminescence and excited-state lifetimes consistent with conventional defect formation methods, without need for post-irradiation thermal annealing. We further find an exponential reduction in excited-state lifetime at fluences approaching the cavity amorphization threshold, and show single-shot local annealing of the intrinsic background defects at the V$_{Si}^-$ formation sites. This real-time in-situ method of localized defect formation, paired with demonstration of cavity-integrated defect spins, marks an important step in engineering cavity-emitter coupling for quantum networking.
