论文标题
MSI2Z4单层的电子和激子特性
Electronic and Excitonic Properties of MSi2Z4 Monolayers
论文作者
论文摘要
MA2Z4单层形成了一种新的六角形非中心对称材料,可容纳非凡的自旋谷物理。最近合成了两种化合物(MOSI2N4和WSI2N4),但理论预测了此类二维材料的全新家族的有趣(Opto)电子特性。在这里,从第一原理研究了选定的MSI2Z4(M = MO,W; Z = N,P,AS,SB)化合物的带隙和旋转轨道分裂的化学趋势。有效的基于伯特盐的计算揭示了较高的激子结合能。通过提供其有效的G因子和Dimamagnetic系数,可以直接比较外部磁场下的激子能量的演变。特别是,涉及较高传导带的激子预测大型阳性g因子。鉴于这些预测,MSI2Z4单层产生了一个新的平台来研究激子,并且对光电设备(也以异质结构的形式)具有吸引力。此外,在所研究的最重的化合物WSI2SB4中观察到自旋轨道诱导的带状反转,这是其拓扑性质的标志。
MA2Z4 monolayers form a new class of hexagonal non-centrosymmetric materials hosting extraordinary spin-valley physics. While only two compounds (MoSi2N4 and WSi2N4) were recently synthesized, theory predicts interesting (opto)electronic properties of a whole new family of such two-dimensional materials. Here, the chemical trends of band gaps and spin-orbit splittings of bands in selected MSi2Z4 (M = Mo, W; Z = N, P, As, Sb) compounds are studied from first-principles. Effective Bethe-Salpeter-equation-based calculations reveal high exciton binding energies. Evolution of excitonic energies under external magnetic field is predicted by providing their effective g-factors and diamagnetic coefficients, which can be directly compared to experimental values. In particular, large positive g-factors are predicted for excitons involving higher conduction bands. In view of these predictions, MSi2Z4 monolayers yield a new platform to study excitons and are attractive for optoelectronic devices, also in the forms of heterostructures. In addition, a spin-orbit induced bands inversion is observed in the heaviest studied compound, WSi2Sb4, a hallmark of its topological nature.