论文标题
具有低温BI触点和内在的Schottky屏障的MOS2中的量子点形成
Formation of quantum dots in MoS2 with cryogenic Bi contacts and intrinsic Schottky barriers
论文作者
论文摘要
二维（2D）基于材料的量子限制的最新进展为调查和操纵电子传输的量子应用提供了机会。但是，金属/半导体界面效应的问题创造了一个障碍，以实现量子点的人工制造并研究量子传输。在这里，我们利用了使用半准与过渡金属二核苷元素源的欧姆接触的策略，尤其是多层MOS2，并成功地制造了基于MOS2-BI的FET设备。我们在低温温度4.2、2.3和0.4 K处观察MOS2-BI设备中的欧姆行为。我们还利用MOS2和AU之间在MOS2和AU之间形成的固有的Schottky屏障来形成和控制量子点。我们在低温温度下观察到MOS2设备中的库仑钻石。我们在MOS2中的量子运输结果可以用作垫脚石，用于研究新型量子效应，例如自旋 - 瓦利耦合和量子系统的操纵。
The recent advancement in two-dimensional (2D) materials-based quantum confinement has provided an opportunity to investigate and manipulate electron transport for quantum applications. However, the issues of metal/semiconductor interface effects create a hurdle to realize the artificial fabrication of the quantum dot and study the quantum transport. Here, we utilize the strategy of employing the semimetal for Ohmic contacts with transition metal dichalcogenides especially, multilayer MoS2 and successfully fabricate the MoS2-Bi based FET devices. We observe the Ohmic behavior in the MoS2-Bi devices at cryogenic temperatures 4.2, 2.3 and 0.4 K. We also utilize intrinsic Schottky barriers formed at the interface between MoS2 and Au for the gate electrodes to form and control quantum dots. We observed Coulomb diamonds in MoS2 devices at cryogenic temperature. Our results of quantum transport in MoS2 could serve as a stepping stone for investigating novel quantum effects such as spin-valley coupling and the manipulation of qubit systems.
