论文标题
基于Alo $ _x $/ktao $ _3 $(111)接口的超导二维电子气体的构图
Patterning of superconducting two-dimensional electron gases based on AlO$_x$/KTaO$_3$(111) interfaces
论文作者
论文摘要
氧化物界面上二维电子气体(2DEG)表现出的特性的多功能性促进了激烈的研究,希望能够在限制系统中实现异国情调的电磁效应。特别有趣的是最近发现的超导状态出现在(111)为导向的ktao $ _3 $接口中,其临界温度$ t_c \约2 $ k,几乎是SRTIO $ _3 $ _3 $的2DEGS的界面。就像在基于SRTIO $ _3 $的2DEG中一样,由于二维高度的脆弱性以及散装ktao $ _3 $的倾向,在新系统中制造设备是一项技术挑战,可以在不良的氧气空缺掺杂时在设备外进行导电。在这里,我们介绍了三种不同的技术,用于在alo $ _x $/ktao $ _3 $〜(111)异质结构中进行构图大厅。这些设备显示出从1.3 k至1.78 K的超导过渡,未造成的薄膜的降解有限,并且可以通过电场效应对载体密度进行有效调整。一系列技术允许定义具有各种尺寸的通道,以设计各种设备,以探索该系统的属性,直到纳米级。
The versatility of properties displayed by two-dimensional electron gases (2DEGs) at oxide interfaces has fostered intense research in hope of achieving exotic electromagnetic effects in confined systems. Of particular interest is the recently discovered superconducting state appearing in (111)-oriented KTaO$_3$ interfaces, with a critical temperature $T_c \approx 2$ K, almost ten times higher than that of SrTiO$_3$-based 2DEGs. Just as in SrTiO$_3$-based 2DEGs, fabricating devices in this new system is a technical challenge due to the fragility of the 2DEG and the propensity of bulk KTaO$_3$ to become conducting outside the devices upon adventitious oxygen vacancy doping. Here, we present three different techniques for patterning Hall bars in AlO$_x$/KTaO$_3$~(111) heterostructures. The devices show superconducting transitions ranging from 1.3 K to 1.78 K, with limited degradation from the unpatterned thin film, and enable an efficient tuning of the carrier density by electric field effect. The array of techniques allows for the definition of channels with a large range of dimensions for the design of various kinds of devices to explore the properties of this system down to the nanoscale.