论文标题

拓扑状态在过渡金属掺杂的二曲烯中介导的rkky相互作用

RKKY interactions mediated by topological states in transition metal doped bismuthene

论文作者

Lopes, Emmanuel V. C., Vernek, E., Schmidt, Tome M.

论文摘要

我们已经研究了具有受保护边缘状态的生物茶拓制绝缘子中过渡金属离子之间的磁相互作用。我们发现,这些拓扑状态在2D拓扑绝缘子中的磁相互作用中起着至关重要的作用。使用第一原理和模型哈密顿量,我们对过渡金属掺杂的体积和纳米苯甲苯乙烯进行了比较研究。尽管过渡金属之间的直接重叠在宽大的大体繁殖中占上风,但在纳米骨的边界上存在远距离磁性。交换相互作用由拓扑状态介导的类似rkky的哈密顿量很好地描述了。我们的结果表明,拓扑状态促进的抗铁磁性的主导地位,由于全球时间反转对称性保存,保留了旋转的狄拉克越野状态。这种由无质量电子介导的扩展磁相互作用可以增加自旋扩散长度,这对于快速耗散无旋转器设备有希望。

We have investigated magnetic interactions between transition metal ions in bismuthene topological insulator with protected edge states. We find that these topological states have a crucial role on the magnetic interactions in 2D topological insulators. Using first-principles and model Hamiltonian we make a comparative study of transition metal doped bulk and nanoribbon bismuthene. While direct overlap between the transition metal prevails in gapped bulk bismuthene, at the borders of nanoribbons a long-range magnetism is present. The exchange interactions are well described by a RKKY-like Hamiltonian mediated by topological states. Our results show a dominance of antiferromagnetism promoted by the topological states, preserving the spin-locked Dirac crossing states due to a global time-reversal symmetry preservation. This extended magnetic interactions mediated by massless electrons can increase the spin diffusion length being promising for fast dissipationless spintronic devices.

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