论文标题
将深度杂质，S，SE和Zn引入Si晶片中，以进行Si Qubit的高温操作
Introduction of deep level impurities, S, Se, and Zn, into Si wafers for high-temperature operation of a Si qubit
论文作者
论文摘要
为了实现Si Qubits的高温操作，已经将其引入Si wafers引入了较大的限制能量的深度杂质水平。 II组杂质Zn和VI组杂质S和SE被已知形成深度水平的S和SE通过离子植入引入Si底物中。分析这些样品的浓度深度分布，能级深度和缺陷。为了将深层杂质引入薄通道，例如50 nm厚的Si，我们发现了杂质引入条件，因此浓度深度剖面的最大值在距Si表面小于50 nm的情况下。然后，对深层的形成和缺陷的缺失进行了实验检查。通过使用条件将深层杂质引入从实验中获得的Si晶圆，在室温下运输，量子的高温操作以及室温的量子磁性传感器是有希望的。
To realize high-temperature operation of Si qubits, deep impurity levels with large confinement energy, which are hardly thermally excited, have been introduced into Si wafers. Group II impurity Zn and group VI impurities S and Se, which are known to form deep levels, were introduced into the Si substrates by ion implantation. These samples were analyzed for concentration-depth profiles, energy level depths, and absence of defects. To introduce deep impurities into thin channels such as 50-nm-thick Si, we found impurity introduction conditions so that the concentration depth profiles have maximum value at less than 50 nm from the Si surface. Then, the formation of the deep levels and absence of defects were experimentally examined. By using the conditions to introduce deep impurities into Si wafer obtained from the experiments, single-electron transport at room temperature, high-temperature operation of qubit, and room-temperature quantum magnetic sensors are promising.
