论文标题
手性诱导的基于胎的现场效应晶体管中的固有电荷整流
Chirality-induced intrinsic charge rectification in a tellurium-based field-effect transistor
论文作者
论文摘要
我们报告了在磁场的手性半导体TE中，栅极诱导的内在电荷整流的增强。随着门控将化学电位转移到TE的价值最大值时，电荷的整流效率提高了百倍。通过集成模型计算，我们将电荷矫正归因于手性带结构的B诱导的不对称性。我们还表明，载受这种不对称性的载体密度被Valence带最大值附近的鞍点结构增强，这进一步增强了栅极可调电荷的整流，并提高了其提高的切换性和热稳定性。
We report gate-induced enhancement of intrinsic charge rectification without p-n junctions in chiral semiconductor Te under magnetic field B. As gating shifts the chemical potential to the valence band maximum of Te, the charge rectification efficiency is enhanced hundredfold. By integrating model calculations, we attribute the charge rectification to the B-induced asymmetry of the chiral band structure. We also show that the carrier density subject to this asymmetry is augmented by a saddle-point structure near the valence band maximum, which further enhances the gate-tunable charge rectification together with its improved switchability and thermal robustness.
