论文标题
单层整合940 nm半VCSEL在散装GE底物上
Monolithically integrated 940 nm half VCSELs on bulk Ge substrates
论文作者
论文摘要
高质量的N型藻类分布式Bragg反射器（DBRS）和LNGAAS多个量子井在4英寸偏外GE（100）Wafers上成功生长。生长的结构具有光致发光光谱和反射率光谱，可与传统的散装GAAS晶圆相媲美，具有光滑的形态和合理的均匀性。这些结果强烈支持大区域大块GE基板的全面VCSEL生长和制造，用于基于藻类的VCSEL的大规模生产。
High quality n-type AlGaAs distributed Bragg reflectors (DBRs) and lnGaAs multiple quantum wells were successfully monolithically grown on 4-inch off-cut Ge (100) wafers. The grown structures have photoluminescence spectra and reflectance spectra comparable to those grown on conventional bulk GaAs wafers and have smooth morphology and reasonable uniformity. These results strongly support full VCSEL growth and fabrication on larger-area bulk Ge substrates for the mass production of AlGaAs-based VCSELs.
