论文标题
C轴限制MOTE中层堆叠障碍的出现$ _2 $
Emergence of Layer Stacking Disorder in c-axis Confined MoTe$_2$
论文作者
论文摘要
2D材料中的层堆叠顺序强烈影响功能性能，并对下一代电子设备持希望。在批量生产中，八面体Mote $ _2 $具有两个堆叠安排，Weyl Semimetal t $ _d $ epeas和高阶拓扑绝缘体1T'阶段；但是，目前尚不清楚Mote $ _2 $的薄薄薄片遵循T $ _D $，1T'还是替代堆叠序列。在这里，我们使用透射电子显微镜中的原子分辨率成像解决了这一争论。我们发现，在Mote $ _2 $的薄片中堆叠的层是高度混乱和伪随机的，我们将其归因于固有的限制效应。相反，WTE $ _2 $，它是等值效应的，对于MOTE $ _2 $，即使在薄剥落的薄片中也订购了堆叠的订购。我们的结果对于理解MOTE $ _2 $设备的量子性能很重要，并建议厚度可用于改变其他2D材料中的层堆叠。
The layer stacking order in 2D materials strongly affects functional properties and holds promise for next generation electronic devices. In bulk, octahedral MoTe$_2$ possesses two stacking arrangements, the Weyl semimetal T$_d$ phase, and the higher-order topological insulator 1T' phase; however, it remains unclear if thin exfoliated flakes of MoTe$_2$ follow the T$_d$, 1T', or an alternative stacking sequence. Here, we resolve this debate using atomic-resolution imaging within the transmission electron microscope. We find that the layer stacking in thin flakes of MoTe$_2$ is highly disordered and pseudo-random, which we attribute to intrinsic confinement effects. Conversely, WTe$_2$, which is isostructural and isoelectronic to MoTe$_2$, displays ordered stacking even for thin exfoliated flakes. Our results are important for understanding the quantum properties of MoTe$_2$ devices, and suggest that thickness may be used to alter the layer stacking in other 2D materials.
