论文标题
半金属和半导体的石墨烯-HBN多层，具有平行或反向堆叠
Semimetallic and semiconducting graphene-hBN multilayers with parallel or reverse stacking
论文作者
论文摘要
我们从理论上研究了具有不同对称性的交替石墨烯和HBN层的3D层晶体。根据石墨烯层之间的跳跃参数，我们发现这些合成的3D材料可以具有半金属，间隙或Weyl半分相。我们的结果表明，从单个2D材料堆叠的3D晶体代表具有与其成分不同的新兴特性的合成材料类。
We theoretically investigate 3D layered crystals of alternating graphene and hBN layers with different symmetries. Depending on the hopping parameters between the graphene layers, we find that these synthetic 3D materials can feature semimetallic, gapped, or Weyl semimetal phases. Our results demonstrate that 3D crystals stacked from individual 2D materials represent a synthetic materials class with emergent properties different from their constituents.
