论文标题
相关带边缘DOS占用统计数据相关的激发状态电子熵产生与太阳能电池的自由能量损失和内在VOC缺陷
Relating Band Edge DOS Occupancy Statistics Associated Excited State Electrons Entropy Generation to Free Energy Loss and Intrinsic Voc Deficit of Solar Cells
论文作者
论文摘要
科学的发明是太阳能电池的发明，热力学已被用来评估其性能限制，指导材料科学和光伏技术的进步，以减少实际效率和热力学限制到光伏能量转换之间的差距。通过系统地解决当前光伏的热力学效率损失，可以预期超高效率光伏。当前，一些超高有效的太阳能电池的非辐射重组几乎完全抑制，辐射重组损失是限制进一步改善设备性能的关键。这项工作将半导体吸收器和传输层的状态（DOS）的能带边缘电子密度，激发/转移状态电子熵与太阳能电池中光电转换期间热力学不可避免的能量损失有关。 On accounts of the basic limitations of thermodynamic laws on the energy conversion process, this work reveals a hidden variable that affects the photovoltaic performance and puts forward the band edge DOS engineering as a new dimension in performance optimization of solar cell apart from the traditional material and defect passivation engineering, etc. This work highlights the great importance of DOS engineering for further improving the performance of any solar cell devices.
Ever science the invention of solar cells, thermodynamics has been used to assess their performance limits, guiding advances in materials science and photovoltaic technology to reduce the gap between the practical efficiencies and the thermodynamic limits to photovoltaic energy conversion. By systematically addressing the thermodynamic efficiency losses in current photovoltaic, ultrahigh efficiency photovoltaic can be expected. Currently, the non-radiative recombination of some ultrahigh efficient solar cells is almost completely suppressed, and the radiative recombination loss is then the key to restrict the further improvement of device performance. This work relates the energy band edge electronic density of states (DOS) of semiconductor absorber and transport layer, excited/transfer state electronic entropy to thermodynamically inevitable energy loss during photoelectric conversion in solar cells. On accounts of the basic limitations of thermodynamic laws on the energy conversion process, this work reveals a hidden variable that affects the photovoltaic performance and puts forward the band edge DOS engineering as a new dimension in performance optimization of solar cell apart from the traditional material and defect passivation engineering, etc. This work highlights the great importance of DOS engineering for further improving the performance of any solar cell devices.
