论文标题
磁性拓扑绝缘子中磁性和磁转移的依赖性的依赖性bi $ _ {2} $ te $ _ {3} $和bisbte $ _ {3} $包含自组织的mnbi $ _ {2} $ _ {2} $ _ {2}
Fermi level dependence of magnetism and magnetotransport in the magnetic topological insulators Bi$_{2}$Te$_{3}$ and BiSbTe$_{3}$ containing self-organized MnBi$_{2}$Te$_{4}$ septuple layers
论文作者
论文摘要
磁掺杂的拓扑拓扑绝缘子中的磁耦合机制和磁转运现象已成为核心问题，旨在吸引对磁足现象的控制访问，例如量子异常霍尔效应和拓扑轴承绝缘状态。在这里，我们专注于散装载体在磁性拓扑绝缘子家族中的作用，其中主机材料是Bi $ _ {2} $ _ {2} $ te $ _ {3} $或Bisbte $ _ {3} $，其中包含Mn以Mnbi $ _ {2} $ _ {2} $ _ $ _ESPLE的MN自组织。我们使用电子照射技术调整费米水平，并研究磁性特性如何通过载体密度变化而变化，还讨论了辐射缺陷的作用。铁磁谐振光谱和磁转运测量值分别显示了费米水平的位置对磁各向异性场和居里温度的影响，分别不包括基于载体介导的过程的散装磁力。此外，磁通转运测量表明，异常的大厅效应由固有和耗散的无浆果相驱动的机制主导，由于贝里曲率在避难的带横梁附近浓缩了浆果曲率，因此在传导/价带的底部/传导/价带附近增强了大厅的电阻率。这些结果表明，可以通过调整费米水平来有效地管理，最大化或关闭异常的大厅效应。
The magnetic coupling mechanisms underlying ferromagnetism and magnetotransport phenomena in magnetically doped topological insulators have been a central issue to gain controlled access to the magneto-topological phenomena such as quantum anomalous Hall effect and topological axion insulating state. Here, we focus on the role of bulk carriers in magnetism of the family of magnetic topological insulators, in which the host material is either Bi$_{2}$Te$_{3}$ or BiSbTe$_{3}$, containing Mn self-organized in MnBi$_{2}$Te$_{4}$ septuple layers. We tune the Fermi level using the electron irradiation technique and study how magnetic properties vary through the change in carrier density, the role of the irradiation defects is also discussed. Ferromagnetic resonance spectroscopy and magnetotransport measurements show no effect of the Fermi level position on the magnetic anisotropy field and the Curie temperature, respectively, excluding bulk magnetism based on a carrier-mediated process. Furthermore, the magnetotransport measurements show that the anomalous Hall effect is dominated by the intrinsic and dissipationless Berry-phase driven mechanism, with the Hall resistivity enhanced near the bottom/top of the conduction/valence band, due to the Berry curvature which is concentrated near the avoided band crossings. These results demonstrate that the anomalous Hall effect can be effectively managed, maximized, or turned off, by adjusting the Fermi level.
