论文标题
基于低温SRAM的任意波形生成器，以用于自旋量子置量控制
A cryogenic SRAM based arbitrary waveform generator in 14 nm for spin qubit control
论文作者
论文摘要
实现量子门序列需要具有可编程振幅，持续时间，间距和相位的连贯的微波控制脉冲。我们提出了一个基于SRAM的任意波形生成器，用于对旋转Qub的低温控制。我们在这项工作中证明了14 nm FinFET技术中完全可编程的射频任意波形发生器的低温操作。来自控制处理器的波形序列可以存储在SRAM内存阵列中，可以实时编程。波形图案通过源序列端接的数字转换器转换为微波脉冲。该芯片在4 K下运行，能够在所需的载体频率下产生任意的包膜形状。 AWG的总功耗在4 K时为40-140MW，具体取决于波特率。在4 K处测量了1-17 GHz的宽信号带，而在平均伪造的自由动态范围为40 dB的情况下，可以使用频施加多路复用来实现多个Qubit控制。这项工作为最佳量子控制和闭环反馈控制铺平了道路，这对于实现低延迟误差是必不可少的
Realization of qubit gate sequences require coherent microwave control pulses with programmable amplitude, duration, spacing and phase. We propose an SRAM based arbitrary waveform generator for cryogenic control of spin qubits. We demonstrate in this work, the cryogenic operation of a fully programmable radio frequency arbitrary waveform generator in 14 nm FinFET technology. The waveform sequence from a control processor can be stored in an SRAM memory array, which can be programmed in real time. The waveform pattern is converted to microwave pulses by a source-series-terminated digital to analog converter. The chip is operational at 4 K, capable of generating an arbitrary envelope shape at the desired carrier frequency. Total power consumption of the AWG is 40-140mW at 4 K, depending upon the baud rate. A wide signal band of 1-17 GHz is measured at 4 K, while multiple qubit control can be achieved using frequency division multiplexing at an average spurious free dynamic range of 40 dB. This work paves the way to optimal qubit control and closed loop feedback control, which is necessary to achieve low latency error mitigation
