论文标题

基于深度学习的缺陷分类和SEM图像中的检测:蒙版R-CNN方法

Deep Learning based Defect classification and detection in SEM images: A Mask R-CNN approach

论文作者

Dey, Bappaditya, Dehaerne, Enrique, Khalil, Kasem, Halder, Sandip, Leray, Philippe, Bayoumi, Magdy A.

论文摘要

在这项研究工作中,我们已经证明了Mask-RCNN(区域卷积神经网络)的应用,该算法是用于计算机视觉,特别是对象检测的深度学习算法,对半导体缺陷检查域。随着我们不断收缩电路模式尺寸(例如,对于小于32 nm的音高),半导体制造过程中的随机缺陷检测和分类已成为一项艰巨的任务。最先进的光学和电子束检查工具的缺陷检查和分析通常是由某些基于规则的技术驱动的,这些技术经常导致错误分类,因此需要进行人类专家干预。在这项工作中,我们重新审视并扩展了以前的深度学习缺陷分类和检测方法,以改善SEM图像中缺陷范围的缺陷实例分割,并为每个缺陷类别/实例生成掩码。这也使提取和校准每个分段掩码并量化构成每个掩码的像素,这又使我们能够计算每个分类缺陷实例,并根据像素计算表面积。我们旨在检测和分割不同类型的类间随机缺陷模式,例如桥梁,断裂和线塌陷,以及准确区分阶层内的多类缺陷桥梁方案(作为薄/单/多线/多线/水平/非霍尼群),以促进侵略性的音高以及较薄的均匀固定效果(高NA)。我们提出的方法在定量和定性上都证明了其有效性。

In this research work, we have demonstrated the application of Mask-RCNN (Regional Convolutional Neural Network), a deep-learning algorithm for computer vision and specifically object detection, to semiconductor defect inspection domain. Stochastic defect detection and classification during semiconductor manufacturing has grown to be a challenging task as we continuously shrink circuit pattern dimensions (e.g., for pitches less than 32 nm). Defect inspection and analysis by state-of-the-art optical and e-beam inspection tools is generally driven by some rule-based techniques, which in turn often causes to misclassification and thereby necessitating human expert intervention. In this work, we have revisited and extended our previous deep learning-based defect classification and detection method towards improved defect instance segmentation in SEM images with precise extent of defect as well as generating a mask for each defect category/instance. This also enables to extract and calibrate each segmented mask and quantify the pixels that make up each mask, which in turn enables us to count each categorical defect instances as well as to calculate the surface area in terms of pixels. We are aiming at detecting and segmenting different types of inter-class stochastic defect patterns such as bridge, break, and line collapse as well as to differentiate accurately between intra-class multi-categorical defect bridge scenarios (as thin/single/multi-line/horizontal/non-horizontal) for aggressive pitches as well as thin resists (High NA applications). Our proposed approach demonstrates its effectiveness both quantitatively and qualitatively.

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