论文标题
用超电原子调整异常的浮光拓扑带
Tuning anomalous Floquet topological bands with ultracold atoms
论文作者
论文摘要
Floquet Engineering为在静态系统中没有对应的情况下创建新的拓扑状态开辟了道路。在这里，我们报告了具有高精度浮雕工程的新异常拓扑状态的实验性实现和表征，用于陷入摇动的光学拉曼晶格中的超低原子。通过调整称为带反转表面（BISS）的驾驶诱导的带横梁（BISS）来操纵Floquet带拓扑，其配置完全表征了基础状态的拓扑结构。我们通过测量与散装Floquet拓扑相对应的BISS构型来揭示各种异国异常的拓扑状态。特别是，我们确定了前所未有的异常浮点数谷洞状态，该状态具有由山谷保护的异常的Helicallike边缘模式和具有高CHERN数字的手性状态。
The Floquet engineering opens the way to create new topological states without counterparts in static systems. Here, we report the experimental realization and characterization of new anomalous topological states with high-precision Floquet engineering for ultracold atoms trapped in a shaking optical Raman lattice. The Floquet band topology is manipulated by tuning the driving-induced band crossings referred to as band inversion surfaces (BISs), whose configurations fully characterize the topology of the underlying states. We uncover various exotic anomalous topological states by measuring the configurations of BISs which correspond to the bulk Floquet topology. In particular, we identify an unprecedented anomalous Floquet valley-Hall state that possesses anomalous helicallike edge modes protected by valleys and a chiral state with high Chern number.
