论文标题
铀薄膜氢化物的合成和物理特性Uh2和\ b {eta} -uh3
Synthesis and physical properties of uranium thin-film hydrides UH2 and \b{eta}-UH3
论文作者
论文摘要
使用变量沉积条件探索了纯铀氢化物膜UH2和\ B {eta} -UH3，由反应性的DC溅射合成。通过多种方法（光电子光谱 - XPS）和Ex -Situ（X射线衍射-XRD，透射电子显微镜 - TEM），电阻率和磁化指标研究，通过多种方法（光电子光谱 - XPS）和Ex -Situ（光电谱 - XPS）和Ex -Situ（X射线衍射 - XRD）研究了获得的稳定的无氧氢化物膜。两种类型的氢化物都是铁磁性的，UH2和\ b {eta} -UH3的质量温度约为。分别为120和170 K。薄膜中的铁磁性很强，不依赖于结构细节，而电阻率数据反映了两种类型的氢化物中的障碍。
Formation of thin uranium hydrides films, UH2 and \b{eta}-UH3, synthesized by a reactive dc sputtering of uranium metal, was explored using variable deposition conditions. Obtained stable oxygen-free hydride films were studied by a variety of methods, both in situ (photoelectron spectroscopy - XPS), and ex-situ (x-ray diffraction - XRD, transmission electron microscopy - TEM), electrical resistivity, and magnetometry). Both types of hydrides are ferromagnetic, the Curie temperatures of UH2 and \b{eta}-UH3 are approx. 120 and 170 K, respectively. Ferromagnetism in the thin films is robust and does not depend on structure details while electrical resistivity data reflect disorder in both types of hydrides.
