论文标题
气体源分子束外延制造的新的半导体钙钛矿合金系统
A new semiconducting perovskite alloy system made possible by gas-source molecular beam epitaxy
论文作者
论文摘要
光电技术基于半导体合金族。很少有一个新的半导体合金家族发展到可能的外延生长。自1950年代以来，这大约每十年发生一次。在这里，我们证明了通过气体源分子束外疗（MBE）在BA-ZR-S-SE系统中半导体的甲状腺素钙钛矿合金的外延薄膜生长。我们稳定了整个范围y = 0 ... 3的构图bazrs $ _ {（3-y）} $ se $ _y $在perovskite结构中，直至和包括bazrse $ _3 $，通过在bazrs $ _3 $ _3 $外表模板上生长。所产生的胶片在环境上是稳定的，直接带隙（$ e_g $）差异很大，与SE内容相差很大，如理论所预测的那样，涵盖$ e_g $ = 1.9 ... 1.4 ev for $ y $ = 0 ... 3。这为可见的和近馈（vis-nir）Optoelectronics optoelectronics和Solid State stolidate cys of Storit cellars of solar Lighting和Solar Perinide提供了可见的可能性。
Optoelectronic technologies are based on families of semiconductor alloys. It is rare that a new semiconductor alloy family is developed to the point where epitaxial growth is possible; since the 1950s, this has happened approximately once per decade. Here we demonstrate epitaxial thin film growth of semiconducting chalcogenide perovskite alloys in the Ba-Zr-S-Se system by gas-source molecular beam epitaxy (MBE). We stabilize the full range y = 0 ... 3 of compositions BaZrS$_{(3-y)}$Se$_y$ in the perovskite structure, up to and including BaZrSe$_3$, by growing on BaZrS$_3$ epitaxial templates. The resulting films are environmentally stable and the direct band gap ($E_g$) varies strongly with Se content, as predicted by theory, covering the range $E_g$ = 1.9 ... 1.4 eV for $y$ = 0 ... 3. This creates possibilities for visible and near-infrared (VIS-NIR) optoelectronics, solid state lighting, and solar cells using chalcogenide perovskites.
