论文标题
CVD钻石中硅空置中心的室温照片染色
Room-temperature photo-chromism of silicon vacancy centers in CVD diamond
论文作者
论文摘要
钻石中的硅离散性（SIV）中心通常在三个稳定的电荷状态下发现，SIV0，SIV-和SIV2-，但是研究导致其形成的过程的过程很有挑战，尤其是在室温下，由于它们的光发光速率不同。在这里，我们使用共聚焦荧光显微镜在环境条件下激活所有三个电荷状态之间的探针电荷互连。特别是，我们通过两步捕获散布的，照片生成的孔的形成SIV0，这一过程通过低温下的直接SIV0荧光测量以及在存在外部施加的电场的情况下暴露了这两种过程。此外，我们表明连续的红色照明诱导相反过程，首先将SIV0转换为SIV-，然后转化为SIV2-。我们的结果阐明了SIV的电荷动态以及纳米级传感和量子信息处理的机会。
The silicon-vacancy (SiV) center in diamond is typically found in three stable charge states, SiV0, SiV- and SiV2-, but studying the processes leading to their formation is challenging, especially at room temperature, due to their starkly different photo-luminescence rates. Here, we use confocal fluorescence microscopy to activate and probe charge interconversion between all three charge states under ambient conditions. In particular, we witness the formation of SiV0 via the two-step capture of diffusing, photo-generated holes, a process we expose both through direct SiV0 fluorescence measurements at low temperatures and confocal microscopy observations in the presence of externally applied electric fields. Further, we show that continuous red illumination induces the converse process, first transforming SiV0 into SiV-, then into SiV2-. Our results shed light on the charge dynamics of SiV and promise opportunities for nanoscale sensing and quantum information processing.
