论文标题
使用薄电阻硅探测器，高精度4D跟踪使用大像素
High-Precision 4D Tracking with Large Pixels using Thin Resistive Silicon Detectors
论文作者
论文摘要
具有电阻读取的硅传感器操作的基本原理是内置的电荷共享。电阻硅探测器（RSD，也称为AC-LGAD），利用冲击点周围电极上看到的信号，即使使用非常大的像素也可以实现出色的空间和时间分辨率。在本文中，使用1064 nm picsecond激光器的TCT系统用于表征Fondazione Bruno Kessler第二次RSD生产中的传感器。本文首先在确定RSD中的位置和时间坐标时介绍了误差的参数化，然后概述了重建方法，并最终提出了结果。分析中使用了三个不同的像素尺寸：200 x 340、450 x 450和1300 x 1300 micron^2。在增益= 30时，450 x 450微米^2像素可达到20 ps的时间抖动和15微米的空间分辨率，而1300 x 1300微米^2像素分别达到30 ps和30 micton。交叉形电极的实施大大提高了像素表面上的响应均匀性。
The basic principle of operation of silicon sensors with resistive read-out is built-in charge sharing. Resistive Silicon Detectors (RSD, also known as AC-LGAD), exploiting the signals seen on the electrodes surrounding the impact point, achieve excellent space and time resolutions even with very large pixels. In this paper, a TCT system using a 1064 nm picosecond laser is used to characterize sensors from the second RSD production at the Fondazione Bruno Kessler. The paper first introduces the parametrization of the errors in the determination of the position and time coordinates in RSD, then outlines the reconstruction method, and finally presents the results. Three different pixel sizes are used in the analysis: 200 x 340, 450 x 450, and 1300 x 1300 microns^2. At gain = 30, the 450 x 450 microns^2 pixel achieves a time jitter of 20 ps and a spatial resolution of 15 microns concurrently, while the 1300 x 1300 microns^2 pixel achieves 30 ps and 30 micron, respectively. The implementation of cross-shaped electrodes improves considerably the response uniformity over the pixel surface.
