论文标题
在硅晶片上制造高Q超导α-Tantalum谐振器
Manufacturing high-Q superconducting α-tantalum resonators on silicon wafers
论文作者
论文摘要
目前，最先进的超导量子设备的性能受到不同表面和接口处的微波介电损耗的限制。 α-Tantalum是一种超导体，由于其较薄的低损坏氧化物，已证明可有效减少介电损耗和改善装置性能。但是，在没有种子层的情况下，迄今为止，这种触觉阶段仅在蓝宝石基材上实现，这与行业规模的制造设施中的高级处理不兼容。在这里，我们证明了在各种金属沉积条件下直接在硅晶片上的高质量因子α-Tantalum谐振器的制造，并进行了全面的材料和电特性研究。通过将实验与模拟谐振器损失进行比较，我们证明了两级系统损失由表面氧化物的贡献而不是底物 - 金属界面主导。我们的研究为低损失超导电路的大规模制造和超导电路性能的材料驱动的进步铺平了道路。
The performance of state-of-the-art superconducting quantum devices is currently limited by microwave dielectric losses at different surfaces and interfaces. α-tantalum is a superconductor that has proven effective in reducing dielectric loss and improving device performance due to its thin low-loss oxide. However, without the use of a seed layer, this tantalum phase has so far only been realised on sapphire substrates, which is incompatible with advanced processing in industry-scale fabrication facilities. Here, we demonstrate the fabrication of high-quality factor α-tantalum resonators directly on silicon wafers over a variety of metal deposition conditions and perform a comprehensive material and electrical characterization study. By comparing experiments with simulated resonator loss, we demonstrate that two-level-system loss is dominated by surface oxide contributions and not the substrate-metal interface. Our study paves the way to large scale manufacturing of low-loss superconducting circuits and to materials-driven advancements in superconducting circuit performance.
