论文标题
使用INAS/INGAAS异质结构的超导Qubits可调电容器
Tunable Capacitor For Superconducting Qubits Using an InAs/InGaAs Heterostructure
论文作者
论文摘要
采用快速，参数耦合元件已改善了超导Qubits的性能，从而在随机采样问题中表明了量子优势的最新证明。低损失，高对比度耦合器的发展对于扩大这些系统至关重要。我们提出了一个蓝图，用于在INAS/INGAAS异质结构中使用二维电子气体实现的栅极可调耦合器。对耦合器和微波电路的半导体和高频电磁行为的严格数值模拟产生了多个数量级的ON/OFF比率。我们从将耦合器包含在两个量子系统中的介电限制损失进行了估计，耦合器相干的范围从少数到数十微秒不等。
Adoption of fast, parametric coupling elements has improved the performance of superconducting qubits, enabling recent demonstrations of quantum advantage in randomized sampling problems. The development of low loss, high contrast couplers is critical for scaling up these systems. We present a blueprint for a gate-tunable coupler realized with a two-dimensional electron gas in an InAs/InGaAs heterostructure. Rigorous numerical simulations of the semiconductor and high frequency electromagnetic behavior of the coupler and microwave circuitry yield an on/off ratio of more than one order of magnitude. We give an estimate of the dielectric-limited loss from the inclusion of the coupler in a two qubit system, with coupler coherences ranging from a few to tens of microseconds.
