论文标题
邮票转移的钻石中的间隙光子晶体腔与钻石中的硅接面中心的混合整合
Hybrid Integration of GaP Photonic Crystal Cavities with Silicon-Vacancy Centers in Diamond by Stamp-Transfer
论文作者
论文摘要
光学地寻址的固态缺陷正在成为量子网络最有希望的量子平台之一。通过纳米腔腔耦合最大化光子缺陷相互作用是网络效率的关键。我们证明了使用邮票转移技术在钻石中与二氧化硅晶体波导腔制造，并随后与植入的硅面膜（SIV）中心整合。冲压过程避免了钻石蚀刻，并可以在整合之前对腔进行微调。转移到Diamond后，我们测量了高达8900的空腔质量因子（$ Q $），并对这些空腔耦合的单SIV中心进行共振激发。对于$ Q $ 4100的空腔，我们观察到三倍的寿命降低，对应于$ c = 2 $的最大潜在合作性。这些结果表明在平台中避免制造量子缺陷宿主晶体的高光子缺陷相互作用有望。
Optically addressable solid-state defects are emerging as one of the most promising qubit platforms for quantum networks. Maximizing photon-defect interaction by nanophotonic cavity coupling is key to network efficiency. We demonstrate fabrication of gallium phosphide 1-D photonic crystal waveguide cavities on a silicon oxide carrier and subsequent integration with implanted silicon-vacancy (SiV) centers in diamond using a stamp-transfer technique. The stamping process avoids diamond etching and allows fine-tuning of the cavities prior to integration. After transfer to diamond, we measure cavity quality factors ($Q$) of up to 8900 and perform resonant excitation of single SiV centers coupled to these cavities. For a cavity with $Q$ of 4100, we observe a three-fold lifetime reduction on-resonance, corresponding to a maximum potential cooperativity of $C = 2$. These results indicate promise for high photon-defect interaction in a platform which avoids fabrication of the quantum defect host crystal.
