论文标题
范德华材料中层间激子的产生速率的内在控制通过Janus层
Intrinsic control of interlayer exciton generation rate in van der Waals materials via Janus layers
论文作者
论文摘要
当本构层具有JANUS结构时,我们证明了工程化过渡金属二甲藻元化杂化器的光学特性的可能性。这对电荷分离效率产生了重要的后果。我们使用第一原理方法(包括电子孔相互作用(激子)和激子 - Phonon耦合,研究了不同的MOS $ _2 $@JANUS层组合。 janus层的固有电场的方向修饰了电子带的对齐,因此,层间激子状态之间的能量分离 - 通常具有非常低的振荡器强度,因此吸收和平面内激动剂均几乎是黑暗的。我们发现,平面晶格振动强烈磨合两个状态,因此激光吸收后激子散射可能是层间激子的可行生成机制。特别是,在MOS $ _2 $@WSSE的情况下,低洼的层间激子与面内激子的能量分离与横向光学声子模式(40 MEV)共鸣。因此,我们将此异叶剂确定为具有有效电荷载体分离的有效电子孔对产生的主要候选者。
We demonstrate the possibility of engineering the optical properties of transition metal dichalcogenide heterobilayers when one of the constitutive layers has a Janus structure. This has important consequences for the charge separation efficiency. We investigate different MoS$_2$@Janus layer combinations using first-principles methods including electron-hole interactions (excitons) and exciton-phonon coupling. The direction of the intrinsic electric field from the Janus layer modifies the electronic band alignments and, consequently, the energy separation between interlayer exciton states -- which usually have a very low oscillator strength and hence are almost dark in absorption -- and bright in-plane excitons. We find that in-plane lattice vibrations strongly couple the two states, so that exciton-phonon scattering may be a viable generation mechanism for interlayer excitons upon light absorption. In particular, in the case of MoS$_2$@WSSe, the energy separation of the low-lying interlayer exciton from the in-plane exciton is resonant with the transverse optical phonon modes (40 meV). We thus identify this heterobilayer as a prime candidate for efficient electron-hole pair generation with efficient charge carrier separation.