论文标题
精确的量子病毒扩展，用于掺杂二维半导体的光学响应
Exact Quantum Virial Expansion for the Optical Response of Doped Two-Dimensional Semiconductors
论文作者
论文摘要
我们为掺杂的二维半导体的光学响应提供了量子病毒膨胀。如我们所示，这构成了高温度或低掺杂方向上的扰动确切理论，其中电子的热波长小于其颗粒间距。病毒膨胀预测了光致发光的新特征，例如与通用低能激子 - 电子散射相关的有吸引力分支的非平凡形状，以及与Trion能量相关的有吸引力峰的相关移动。我们的结果与最近在掺杂的单层Mose $ _2 $ [Zipfel等，Phys。 Rev. B 105，075311（2022）]，它们暗示在先前的测量中可能已经高估了Trion结合能。此外，我们的理论使我们能够正式统一已应用于该系统的两个不同的理论图片，传统的Trion图片结果作为Fermi Polaron理论的高温和弱相互作用限制出现。
We present a quantum virial expansion for the optical response of a doped two-dimensional semiconductor. As we show, this constitutes a perturbatively exact theory in the high-temperature or low-doping regime, where the electrons' thermal wavelength is smaller than their interparticle spacing. The virial expansion predicts new features of the photoluminescence, such as a non-trivial shape of the attractive branch related to universal low-energy exciton-electron scattering and an associated shift of the attractive peak from the trion energy. Our results are in excellent agreement with recent experiments on doped monolayer MoSe$_2$ [Zipfel et al., Phys. Rev. B 105, 075311 (2022)] and they imply that the trion binding energy is likely to have been overestimated in previous measurements. Our theory furthermore allows us to formally unify two distinct theoretical pictures that have been applied to this system, with the conventional trion picture results emerging as a high-temperature and weak-interaction limit of Fermi polaron theory.
