论文标题
在SNBI2TE4中从半准到绝缘体的非常规拓扑相变:异常热膨胀的作用
Unconventional topological phase transition from semimetal to insulator in SnBi2Te4: Role of anomalous thermal expansion
论文作者
论文摘要
我们建议SNBI2TE4是一种新型候选材料,表现出丰富的拓扑阶段之间的介导的过渡。从合并的理论和实验研究中,我们发现SNBI2TE4从低T拓扑半金属相位到高-T(室温)拓扑绝缘阶段,通过中间拓扑金属阶段。 SNBI2TE4的单晶具有各种实验探针的特征,包括基于同步加速器的X射线衍射,磁磁性,霍尔效应,Seebeck系数,磁化强度和角度分辨光发射光谱(ARPES)。 X射线衍射数据证实了低于100 K的单位细胞体积的异常热膨胀,这显着影响了散装带的结构,从而影响了传输特性,如我们的密度功能理论计算所证实。 15 K处的模拟表面状态与我们的ARPES数据相当吻合,并且发现与T的变化相当强大。这间接支持整个T范围内实验观察到的顺磁性奇异性。富拓扑阶段的拟议共存是很少发生的,但铺平了肥沃的地面,以在结构失真驱动的材料中调整各种拓扑阶段。
We propose SnBi2Te4 to be a novel candidate material exhibiting temperature (T) mediated transitions between rich topological phases. From a combined theoretical and experimental studies, we find that SnBi2Te4 goes from a low-T topological semimetallic phase to a high-T (room temperature) topological insulating phase via an intermediate topological metallic phase. Single crystals of SnBi2Te4 are characterized by various experimental probes including Synchrotron based X-ray diffraction, magnetoresistance, Hall effect, Seebeck coefficient, magnetization and angle-resolved photoemission spectroscopy (ARPES). X-ray diffraction data confirms an anomalous thermal expansion of the unit cell volume below 100 K, which significantly affects the bulk band structure and hence the transport properties, as confirmed by our density functional theory calculations. Simulated surface states at 15 K agree fairly well with our ARPES data and are found to be robust with varying T. This indirectly supports the experimentally observed paramagnetic singularity in the entire T-range. The proposed coexistence of rich topological phases is a rare occurrence, yet paves a fertile ground to tune various topological phases in a material driven by structural distortion.