论文标题
在65 nm CMOS过程中实现的数字像素测试结构
Digital Pixel Test Structures implemented in a 65 nm CMOS process
论文作者
论文摘要
Alice ITS3（内部跟踪系统3）升级项目和整体像素传感器上的CERN EP R＆D正在研究Tower Partners半导体Co. 65 nm的可行性，用于下一代顶点探测器。 ITS3的目的是采用晶圆尺度的整体式活性像素传感器变细至20至40 um，并弯曲以形成真正的圆柱形半桶。实现该检测器的第一个关键步骤之一是通过在实验室和梁内测量中进行广泛表征来验证传感器技术。数字像素测试结构（DPTS）是该技术第一传感器提交中产生的原型之一，并且已经进行了系统的测量活动，其细节在本文中介绍。 结果证实了检测效率，非离子化和电离辐射硬度的目标，直至Alice ITS3的预期水平，并且在+20 C时的操作以及DPTS的检测效率为99％，dpts辐射，售价为$ 10^{15} {15} $ 1 MEV N $ _ {\ MATHRM {\ MATHRM {eq eq}/$ cm^$ cm^2.22.22此外，在各种环境和辐照水平上测量了空间，时机和能量分辨率。
The ALICE ITS3 (Inner Tracking System 3) upgrade project and the CERN EP R&D on monolithic pixel sensors are investigating the feasibility of the Tower Partners Semiconductor Co. 65 nm process for use in the next generation of vertex detectors. The ITS3 aims to employ wafer-scale Monolithic Active Pixel Sensors thinned down to 20 to 40 um and bent to form truly cylindrical half barrels. Among the first critical steps towards the realisation of this detector is to validate the sensor technology through extensive characterisation both in the laboratory and with in-beam measurements. The Digital Pixel Test Structure (DPTS) is one of the prototypes produced in the first sensor submission in this technology and has undergone a systematic measurement campaign whose details are presented in this article. The results confirm the goals of detection efficiency and non-ionising and ionising radiation hardness up to the expected levels for ALICE ITS3 and also demonstrate operation at +20 C and a detection efficiency of 99% for a DPTS irradiated with a dose of $10^{15}$ 1 MeV n$_{\mathrm{eq}}/$cm$^2$. Furthermore, spatial, timing and energy resolutions were measured at various settings and irradiation levels.
