论文标题
强烈的MID-IR脉冲驱动的强THZ场的产生和应用
Generation and Applications of strong THz Fields driven by intense mid-IR Pulses
论文作者
论文摘要
尽管THZ频谱范围至少二十年来经历了巨大的兴趣,但它仍然是研究轻度相互作用的最不受欢迎但最令人兴奋的领域之一。由于THZ辐射的光子能量较小,因此它可以通过非导电材料传播,并与低能量激发相互作用,从而导致大量应用。因此,THZ脉冲主要用作探针,而光脉冲会激发所检查的材料。相比之下,强烈的强场THZ瞬变将允许对物质性质进行按需控制。当前的桌面THZ源仍然相当弱,最有希望的是在非线性晶体和近IIR源泵送的两种颜色等离子体中的光学整流(OR)。尽管前者主要受到短波长驱动脉冲的多光子吸收,从而导致晶体损伤,但后者遭受密集血浆中的泵浦脉冲散射和有限的激光野战 - 空压对称性。这些局限性可以通过强烈的长波长驱动脉冲超越。直到最近,这种高功率中IR来源根本没有可用。在这项工作中,我们利用了最近开发的MID-IR光学参数脉冲放大器系统,以通过或两种颜色的等离子体丝在有机晶体DAST中驱动有效的THZ产生,与以前的驱动器相比,我们将光学到THZ转换效率的数量几乎提高到THZ转换效率。强烈的THZ源进一步应用于异质结构量子点,而没有任何场的增强结构来研究纯量子限制的Stark效应。通过直接THZ辐射来操纵纳米级半导体的光学性能的可能性表明,具有TBIT/s范围内的数据速率具有全光功能吸收调节器。
Although the THz spectral range experiences a tremendous grow of interest for at least two decades, it is still one of the least explored but most exciting areas to study light-matter interaction. Due to the small photon energy of THz radiation, it can propagate through non-conductive materials and resonantly interact with low-energy excitations, leading to a plethora of applications. The THz pulse is thereby primarily used as a probe while an optical pulse excites the material that is examined. In contrast, intense strong-field THz transients would allow on-demand control of the properties of matter. Current table-top THz sources remain rather weak, with the most promising being optical rectification (OR) in nonlinear crystals and two-color plasma filaments pumped by near-IR sources. While the former is mainly restricted by multi-photon absorption of the short wavelength driving pulse, causing crystal damage, the latter suffers from pump pulse scattering in dense plasma and limited laser field-asymmetry. These limitations can be surpassed with intense long wavelength driving pulses. Until recently, such high-power mid-IR sources were simply not available. In this work, we exploit the recently developed mid-IR optical parametric chirped pulse amplifier system to drive efficient THz generation in the organic crystal DAST by OR and in two-color plasma filaments, wherein we boost the optical- to THz conversion efficiency by almost an order of magnitude, compared to previous works with near-IR drivers. The intense THz source is further applied to heterostructure quantum dots without any field enhancing structures to investigate the pure quantum confined Stark effect. The possibility to manipulate optical properties of nano-scale semiconductors by direct THz radiation demonstrates the feasibility for an all-optical electro-absorption modulator with data rates in the range of Tbit/s.